Electron–electron interaction in high-quality epitaxial graphene
نویسندگان
چکیده
منابع مشابه
Electron–electron interaction in high-quality epitaxial graphene
Weak localization is studied in two high-quality epitaxial graphene samples grown on silicon-faced 6H-SiC substrates. Following the methodology of Kozikov et al (2010 Phys. Rev. B 82 075424), we measured the temperature dependence of carrier conductivity at zero and low magnetic (B) fields. In both samples, a logarithmic temperature dependence of the carrier conductivity was observed at B = 0 a...
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Epitaxial graphene layers grown on single-crystal SiC have large structural coherence domains and can be easily patterned into submicron structures using standard microelectronics lithography techniques. Patterned structures show two-dimensional electron gas properties with mobilities exceeding 3 m2/Vs. Magnetotransport measurements (Shubnikov–de Haas oscillations) indicate that the transport p...
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ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2011
ISSN: 1367-2630
DOI: 10.1088/1367-2630/13/11/113005